@inproceedings{Ande08,
   Author = {H.K. Ande and P. Busa and M. Balasubramanianand K. A. Campbell and R. Jacob Baker},
   Title = {A New Approach to the Design, Fabrication, and Testing of Chalcogenide-Based Multi-State Phase-Change Nonvolatile Memory},
   BookTitle = {51st Midwest Symposium on Circuits and Systems},
   Pages = {570-573},
   Year = {2008} }

@inproceedings{Happ06,
   Author = {T.D.Happ and M. Breitwisch and A. Schrott and J.B. Philipp and M.H. Lee and R. Cheek and T. Nirschl and M. Lamorey and C.H. Ho and S.H. Chen and
   C.F. Chen and E. Joseph and S. Zaidi and G.W. Burr and B. Yee and Y.C. Chen and S. Raoux and H.L. Lung and R. Bergmann and C. Lam},
   Title = {Novel One-Mask Self-Heating Pillar Phase Change Memory},
   BookTitle = {VLSI Symposium on Technology},
   Pages = {120-121},
   Year = {2006} }



@inproceedings{IBM06,
   Title = {Spintronics},
   BookTitle = {IBM Journal Research and Device},
   Volume = {50},
   Number = {1},
   Year = {2006} }

@inproceedings{Xu08,
   Author = {W. Xu and T. Zhang and Y. Chen},
   Title = {Spin-Transfer Torque Magnetoresistive Content Addressable Memory (CAM) Cell Structure Design with Enhanced Search Noise Margin},
   BookTitle = {IEEE Int. Symp. on Circuits and Systems (ISCAS)},
   Pages = {1898-1901},
   Year = {2008} }

@MISC{Sun:147791,
  title = {Magic PMC Switch Fabrication Method and its Application as Selective Element for High Density Cross Bar Memory Arrays},
  owner = {M. Sun, I. Jin, V. Vaithyanathan, C. Jung, Y.-P. Kim, N. Amin, W. Tian, and H. Li},
  publisher = {US Patent Pending},
  number = {12/496,767}}

@inproceedings{Wang08,
   Author = {X. Wang and Y. Chen and H. Li and H. Liu and D. Dimitrov},
   Title = {Spin Torque Random Access Memory down to 22nm Technology},
   BookTitle = {IEEE International Magnetics Conference},
   Pages = {GD-03},
   Year = {2008} }

@MISC{Sun:20050104101,
  title = {Spin-current Switched Magnetic Memory Element Suitable for Circuit Integration and Method of Fabricating the Memory Element},
  owner = {J. Z. Sun and R. Allensopach and S. Parkin and J. C. Slonczewski and B. D. Terris},
  publisher = {US published patent application},
  number = {20050104101}}

@inproceedings{Beech00,
   Author = {R. Beech and J. Anderson and A. Pohm and J. Daughton},
   Title = {Curie point written magnetoresistive memory},
   BookTitle = {J. Appl. Phys.},
   Volume = {87},
   Pages = {6403},
   Year = {2000} }

@inproceedings{Walker08,
   Author = {A.J. Walker},
   Title = {Sub-50nm DG-TFT-SONOS - the ideal Flash memory for monolithic 3-D integration},
   BookTitle = {IEEE International Electron Devices Meeting},
   Pages = {1-4},
   Year = {2008} }

@inproceedings{Lam08,
   Author = {Chung Lam},
   Title = {Cell Design Considerations for Phase Change Memory as a Universal Memory},
   BookTitle = {International Symposium on VLSI Technology, Systems and Applications},
   Pages = {132-133},
   Year = {2008} }

@inproceedings{Lee08,
   Author = {Chain-Ming Lee and Chih-Wei Chen and Wei-Su Chen and Der-Sheng Chao and Ming-Jung Chen and et al},
   Title = {1T2R Structure with Cross-Spacer for High-Density Phase Change Memory},
   BookTitle = {International Symposium on VLSI Technology, Systems and Applications},
   Pages = {136-137},
   Year = {2008} }

@inproceedings{Callan01,
   Author = {J. P. Callan and A. M.-T. Kim and C. A. Roeser and E. Mazur and J. Solis and J. Siegel and C. N. Afonso and J. C. de Sande},
   Title = {Ultrafast Laser-Induced Phase Transitions in Amorphous GeSb Films},
   BookTitle = {Physical Review Letters},
   Volumn = {86},
   Issue = {16},
   Pages = {3650-3653},
   Year = {2001} }

@inproceedings{Zhou09,
   Author = {Ping Zhou and Bo Zhao and Jun Yang and Youtao Zhang},
   Title = {A Durable and Energy Efficient Main Memory Using Phase Change Memory Technology},
   BookTitle = {The 36th International Symposium on Computer Architecture},
   Page = {14--23},
   Year = {2009} }

@inproceedings{Rajendran07,
   Author = {B. Rajendran and H.-L. Lung and C. Lam},
   Title = {Phase change memory opportunities and challenges},
   BookTitle = {Proc. of International Workshop on Physics of Semiconductor Devices},
   Page = {92-95},
   Year = {2007} }

@inproceedings{LeeK08,
   Author = {K.-J. Lee et al.},
   Title = {A 90nm 1.8V 512Mb diode-switch PRAM with 266MB/s read throughput},
   BookTitle = {IEEE J. Solid-State Circuits},
   Volumn = {43},
   Page = {150-162},
   Year = {2008} }

@inproceedings{LiS09,
   Author = {S. Li and T. Zhang},
   Title = {Exploratory Study on Circuit and Architecture Design of Very High Density Diode-Switch Phase Change Memories},
   BookTitle = {IEEE International Symposium on Quality Electronic Design (ISQED)},
   Page = {424-429},
   Year = {2009} }


@inproceedings{Gogl05,
   Author = {Dietmar Gogl and Christian Arndt and John C. Barwin and Alexander Bette and John DeBrosse and Earl Gow and Heinz Hoenigschmid and Stefan Lammers and Mark Lamorey and
   Yu Lu and Tom Maffitt and Kim Maloney and Werner Obermaier and Andre Sturm andHans Viehmann and Dennis Willmott and Mark Wood and William J. Gallagher and Gerhard Mueller and Arkalgud R. Sitaram},
   Title = {A 16-Mb MRAM Featuring Bootstrapped Write Drivers},
   BookTitle = {IEEE Jour. of Solid-State Circuits},
   Volume = {40},
   Number = {4},
   Pages = {902-908},
   Year = {2005} }

@misc{netbench,
   Author = {},
   Title = {{http://lse.sourceforge.net/benchmarks/netbench/}},
   BookTitle = {},
   Pages = {},
   Year = {} }


@inproceedings{Chen10,
   Author = {Y. Chen and W. Tian and H. Li and X. Wang and W. Zhu},
   Title = {Scalability of PCMO-based Resistive Switch Device in DSM Technologies},
   BookTitle = {IEEE International Symposium on Quality Electronic Design (ISQED)},
   Page = {to appear},
   Year = {2010} }

@inproceedings{Kang03,
   Author = {D.H. Kang and D.H. Ahn and K.B. Kim and J.F. Webb and K.W. Yi},
   Title = {One-dimensional heat conduction model for an electrical phase change random access
memory device with an {$8f^2$} memory cell ({f=0.15$\mu$m})},
   BookTitle = {Journal of Applied Physics},
   Volumn = {94},
   Page = {3536-3542},
   Year = {2003} }


@article{DRAMsim,
   Author = {David Wang and Brinda Ganesh and Nuengwong Tuaycharoen and Katie Baynes and Aamer Jaleel and Bruce Jacob},
   Title = {{DRAMsim: A memory-system simulator}},
   Journal = {SIGARCH Computer Architecture News},
   Volume = {33},
   Number = {4},
   Pages = {100--107},
   Year = {2005} }

@article{Su08,
   Author = {C.-L. Su and C.-W. Tsai and C.-W. Wu and C.-C. Hung and Y.-S. Chen and D.-Y. Wang and Y.-J. Lee and M.-J. Kao},
   Title = {{Write Disturbance Modeling and Testing for MRAM}},
   Journal = {IEEE Transactions on Very Large Scale Integration (VLSI) Systems},
   Volume = {16},
   Number = {3},
   Pages = {277-288},
   Year = {2008} }

@inproceedings{Klostermann07,
   Author = {U. K. Klostermann and M. Angerbauer and U. Griming and F. Kreupl and M. Ruhrig and F. Dahmani and M. Kund and G. Miiller},
   Title = {A Perpendicular Spin Torque Switching based MRAM for the 28 nm Technology Node},
   BookTitle = {IEEE International Electron Devices Meeting (IEDM)},
   Pages = {187-190},
   Year = {2007} }

@inproceedings{Sekikawa08,
   Author = {M. Sekikawa, K. Kiyoyama, H. Hasegawa, K. Miura, T. Fukushima, S. Ikeda, T. Tanaka, H. Ohno, and M. Koyanagi},
   Title = {A novel SPRAM (SPin-transfer torque RAM)-based reconfigurable logic block for 3D-stacked reconfigurable spin processor},
   BookTitle = {IEEE International Electron Devices Meeting (IEDM)},
   Pages = {1-3},
   Year = {2008} }

@inproceedings{Sun09,
   Author = {G. Sun, X. Dong, Y. Xie, J. Li, and Y. Chen},
   Title = {A Novel Architecture of the 3D Stacked MRAM L2 Cache for CMPs},
   BookTitle = {14th International Symposium on High-Performance Computer Architecture (HPCA)},
   Pages = {239-249},
   Year = {2009} }

@article{Wang07,
    author = "W. Wang and Z. Jiang",
    title = "Magnetic Content Addressable Memory",
    journal = "IEEE Trans. on Magnetics",
    volume = 43,
    number = 6,
    month = Jun,
    year = 2007,
    pages = {2355--2357},
}

@misc{Desikan02,
  author = {R. Desikan and C. R. Lefurgy and S. W. Keckler and D. Burger},
  title = "On-chip {MRAM} as a High-Bandwidth Low-Latency Replacement for {DRAM} Physical Memories",
  howpublished = "http://www.cs.utexas.edu/ftp/pub/techreports/tr02-47.pdf",
  year = 2002,
}


@inproceedings{Castro07,
   Author = {D. T. Castro, L. Goux, G. A. M. Hurkx, K. Attenborough, R. Delhougne, J. Lisoni, F. J. Jedema, M. A. A. t Zandt, R. A. M. Wolters,
D. J. Gravesteijn, M. Verheijen, M. Kaiser, and R. G. R. Weemaes},
   Title = {Evidence of the Thermo-Electric Thomson Effect and Influence on
the Program Conditions and Cell Optimization in Phase-Change Memory Cells},
   BookTitle = {IEEE International Electron Devices Meeting (IEDM)},
   Pages = {315-318},
   Year = {2007} }

@inproceedings{Kencke07,
   Author = {D. L. Kencke, I. V. Karpov, B. G. Johnson, L. Sean Jong, K. DerChang, S. J. Hudgens, J. P. Reifenberg, S. D. Savransky, Z. Jingyan,
M. D. Giles, and G. Spadini},
   Title = {The Role of Interfaces in Damascene Phase-Change Memory},
   BookTitle = {IEEE International Electron Devices Meeting (IEDM)},
   Pages = {323-326},
   Year = {2007} }

@inproceedings{Lacaita07,
   Author = {A. L. Lacaita and D. Ielmini},
   Title = {Reliability issues and scaling projections for phase change non volatile memories},
   BookTitle = {IEEE International Electron Devices Meeting (IEDM)},
   Pages = {157-160},
   Year = {2007} }

@inproceedings{Morikawa07,
   Author = {T. Morikawa, K. Kurotsuchi, M. Kinoshita, N. Matsuzaki, Y. Matsui, Y. Fuiisaki, S. Hanzawa, A. Kotabe, M. Terao, H. Moriya, T.
Iwasaki, M. Matsuoka, F. Nitta, M. Moniwa, T. Koga, and N. Takaura },
   Title = {Doped In-Ge-Te Phase Change Memory Featuring Stable Operation
and Good Data Retention},
   BookTitle = {IEEE International Electron Devices Meeting (IEDM)},
   Pages = {307-310},
   Year = {2007} }


@inproceedings{Takaura07,
   Author = {N. Takaura and D. Wouters},
   Title = {Solid-State and Nanoelectronic Devices - Phase Change Memory and New Approaches for Nanoelectronics},
   BookTitle = {IEEE International Electron Devices Meeting (IEDM)},
   Pages = {297},
   Year = {2007} }

@inproceedings{Tsuchiya07,
   Author = {Y. Tsuchiya, M. Yoshiki, A. Kaneko, S. Inumiya, T. Saito, K. Nakajima, T. Aoyama, A. Nishiyama, and M. Koyama},
   Title = {Feasible Integration Scheme for Dual Work Function FUSI/HfSiON Gate Stacks with Selective Metal Pile-up to nMOSFET},
   BookTitle = {IEEE International Electron Devices Meeting (IEDM)},
   Pages = {519-522},
   Year = {2007} }



@inproceedings{Lavizzari08,
   Author = {S. Lavizzari, D. Ielmini, D. Sharma, and A. L. Lacaita},
   Title = {Transient effects of delay, switching and recovery in phase change memory (PCM) devices},
   BookTitle = {IEEE International Electron Devices Meeting (IEDM)},
   Pages = {1-4},
   Year = {2008} }

@inproceedings{Rajendran08,
   Author = {B. Rajendran, J. Karidis, M. H. Lee, M. Breitwisch, G. W. Burr, Y. H. Shih, R. Cheek, A. Schrott, H. L. Lung, and C. Lam},
   Title = {Analytical model for RESET operation of Phase Change Memory},
   BookTitle = {IEEE International Electron Devices Meeting (IEDM)},
   Pages = {1-4},
   Year = {2008} }

@inproceedings{Shih08,
   Author = {Y. H. Shih, J. Y. Wu, B. Rajendran, M. H. Lee, R. Cheek, M. Lamorey, M. Breitwisch, Y. Zhu, E. K. Lai,
   C. F. Chen, E. Stinzianni, A. Schrott, E. Joseph, R. Dasaka, S. Raoux, H. L. Lung, and C. Lam},
   Title = {Mechanisms of retention loss in Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf>-based Phase-Change Memory},
   BookTitle = {IEEE International Electron Devices Meeting (IEDM)},
   Pages = {1-4},
   Year = {2008} }
